Acceptor – An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 – 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision – Displacement of patterns that occurs during the photolithography process.
套准精度 – 在光刻工艺中转移图形的精度。
Anisotropic – A process of etching that has very little or no undercutting
各向异性 – 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination – Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 – 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry – The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 – 测量入射面和主晶轴之间的角度。
Backside – The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 – 晶圆片的底部表面。(注：不推荐该术语，建议使用“背部表面”)
Base Silicon Layer – The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 – 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar – Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管 – 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers – Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片 – 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface – The area where the bonding of two wafers occurs.
绑定面 – 两个晶圆片结合的接触区。
Buried Layer – A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 – 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) – The layer that insulates between the two wafers.
氧化埋层(BOX) – 在两个晶圆片间的绝缘层。
Carrier – Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
载流子 – 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) – A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) – 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark – A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 – 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane – A fracture plane that is preferred.
解理面 – 破裂面
Crack – A mark found on a wafer that is greater than 0.25 mm in length.
裂纹 – 长度大于0.25毫米的晶圆片表面微痕。
Crater – Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 – 在扩散照明下可见的，晶圆片表面可区分的缺陷。
Conductivity (electrical) – A measurement of how easily charge carriers can flow throughout a material.
传导性(电学方面) – 一种关于载流子通过物质难易度的测量指标
。
Conductivity Type – The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 – 晶圆片中载流子的类型，N型和P型。
Contaminant, Particulate (see light point defect)
污染微粒
(参见光点缺陷)
Contamination Area – An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 – 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate – Particles found on the surface of a silicon wafer.
沾污颗粒 – 晶圆片表面上的颗粒。
Crystal Defect – Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶体缺陷 – 部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数
(参见米勒指数)
Depletion Layer – A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 – 晶圆片上的电场区域，此区域排除载流子。
Dimple – A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 – 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor – A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 – 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant – An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
搀杂剂 – 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂
剂可以在元素周期表的III 和 V族元素中发现。
Doping – The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 – 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent – An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 – 晶片中不完整的边缘部分超过0.25毫米。
Edge Exclusion Area – The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 – 位于质量保证区和晶圆片外围之间的区域。(根据晶圆片的尺寸不同而有所不同。)
Edge Exclusion, Nominal (EE) – The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) – 质量保证区和晶圆片外围之间的距离。
Edge Profile – The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 – 通过化学或机械方法连接起来的两个晶圆片边缘。
Etch – A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 – 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) – The area that is most central on a wafer surface.
质量保证区(FQA) – 晶圆片表面中央的大部分。
Flat – A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 – 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter – The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 – 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe – Test equipment used to test resistivity of wafers.
四探针 – 测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes – Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 – 温度测量的工艺设备，具有恒定的处理温度。
Front Side – The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
正面 – 晶圆片的顶部表面(此术语不推荐，建议使用“前部表面”)。
Goniometer – An instrument used in measuring angles.
角度计 – 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
电阻梯度
(不推荐使用，参见“电阻变化”)
Groove – A scratch that was not completely polished out.
凹槽 – 没有被完全清除的擦伤。
Hand Scribe Mark – A marking that is hand scratched onto the back surface of a wafer for identification purposes.
手工印记 – 为区分不同的晶圆片而手工在背面做出的标记。
Haze – A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 – 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole – Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 – 和正电荷类似，是由缺少价电子引起的。
Ingot – A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 – 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
Laser Light-Scattering Event – A signal pulse that locates surface imperfections on a wafer.
激光散射 – 由晶圆片表面缺陷引起的脉冲信号。
Lay – The main direction of surface texture on a wafer.
层 – 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) (不推荐使用，参见“局部光散射”)
Lithography – The process used to transfer patterns onto wafers.
光刻 – 从掩膜到圆片转移的过程。
Localized Light-Scatterer – One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 – 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot – Wafers of similar sizes and characteristics placed together in a shipment.
批次 – 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier – A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 – 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer – A silicon wafer used for testing purposes.
机械测试晶圆片 – 用于测试的晶圆片。
Microroughness – Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 – 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane – A system that utilizes three numbers to identify plan orientation in a crystal.
Miller索指数 – 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions – The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 – 确定晶圆片是否合格的允许条件。
Minority Carrier – A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
少数载流子 – 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound – A raised defect on the surface of a wafer measuring more than 0.25 mm.
堆垛 – 晶圆片表面超过0.25毫米的缺陷。
Notch – An indent on the edge of a wafer used for orientation purposes.
凹槽 – 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel – A roughened surface that is visible to the unaided eye.
桔皮 – 可以用肉眼看到的粗糙表面
Orthogonal Misorientation –
直角定向误差 –
Particle – A small piece of material found on a wafer that is not connected with it.
颗粒 – 晶圆片上的细小物质。
Particle Counting – Wafers that are used to test tools for particle contamination.
颗粒计算 – 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination – Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 – 晶圆片表面的颗粒。
Pit – A non-removable imperfection found on the surface of a wafer.
深坑 – 一种晶圆片表面无法消除的缺陷。
Point Defect – A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 – 不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch –
优先蚀刻 –
Premium Wafer – A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
测试晶圆片 – 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat – The longest flat found on the wafer.
主定位边 – 晶圆片上最长的定位边。
Process Test Wafer – A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 – 用于区域清洁过程中的晶圆片。
Profilometer – A tool that is used for measuring surface topography.
表面形貌剂 – 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) – The amount of difficulty that charged carriers have in moving throughout material.
电阻率(电学方面) – 材料反抗或对抗电荷在其中通过的一种物理特性。
Required – The minimum specifications needed by the customer when ordering wafers.
必需 – 订购晶圆片时客户必须达到的最小规格。
Roughness – The texture found on the surface of the wafer that is spaced very closely together.
粗糙度 – 晶圆片表面间隙很小的纹理。
Saw Marks – Surface irregularities
锯痕 – 表面不规则。
Scan Direction – In the flatness calculation, the direction of the subsites.
扫描方向 – 平整度测量中，局部平面的方向。
Scanner Site Flatness –
局部平整度扫描仪 –
Scratch – A mark that is found on the wafer surface.
擦伤 – 晶圆片表面的痕迹。
Secondary Flat – A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
第二定位边 – 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
Shape –
形状 –
Site – An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
局部表面 – 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array – a neighboring set of sites
局部表面系列 – 一系列的相关局部表面。
Site Flatness –
局部平整 –
Slip – A defect pattern of small ridges found on the surface of the wafer.
划伤 – 晶圆片表面上的小皱造成的缺陷。
Smudge – A defect or contamination found on the wafer caused by fingerprints.
污迹 – 晶圆片上指纹造成的缺陷或污染。
Sori –
Striation – Defects or contaminations found in the shape of a helix.
条痕 – 螺纹上的缺陷或污染。
Subsite, of a Site – An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 – 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture – Variations found on the real surface of the wafer that deviate from the reference surface.
表面纹理 – 晶圆片实际面与参考面的差异情况。
Test Wafer – A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 – 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film – The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 – 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film – The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 – 生产半导体电路的硅层，位于绝缘层顶部。
Total Indicator Reading (TIR) – The smallest distance between planes on the surface of the wafer.
总计指示剂数(TIR) – 晶圆片表面位面间的最短距离。
Virgin Test Wafer – A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 – 还没有用于生产或其他流程中的晶圆片。
Void – The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
无效 – 在应该绑定的地方没有绑定(特别是化学绑定)。
Waves – Curves and contours found on the surface of the wafer that can be seen by the naked eye.
波浪 – 晶圆片表面通过肉眼能发现的弯曲和曲线。
Waviness – Widely spaced imperfections on the surface of a wafer.
波纹 – 晶圆片表面经常出现的缺陷。